AON6152 general description product summary v ds i d (at v gs =10v) 100a r ds(on) (at v gs =10v) < 1.15m? r ds(on) (at v gs =4.5v) < 1.85m? applications 100% uis tested 100% rg tested symbol v 45v n-channel alphasgt tm orderable part number package type form minimum order quantity 45v ? trench power alphasgt tm technology ? low r ds(on) ? low gate charge ? optimized for fast-switching applications absolute maximum ratings t a =25c unless otherwise noted v maximum units AON6152 dfn 5x6 tape & reel 3000 ? synchronous rectification in dc/dc and ac/dc conv erters ? industrial and motor drive applications 45 parameter drain-source voltage g ds top view 12 3 4 87 6 5 pin1 pin1 dfn5x6 top view bottom view v ds v gs i dm i as avalanche energy l=0.3mh c e as v ds spike i v spike t j , t stg symbol t 10s steady-state steady-state r q jc t a =25c t a =70c t c =25c t c =100c t c =25c avalanche current c continuous drain current thermal characteristics parameter max t a =70c 4.7 c units junction and storage temperature range -55 to 150 typ p dsm w t a =25c 7.3 power dissipation a maximum junction-to-ambient a c/w r q ja 14 40 17 w i d v a 60 a 400 i dsm 47 mj 540 58 100 va 20 v maximum junction-to-case c/w c/w maximum junction-to-ambient a d 0.45 50 0.6 power dissipation b 83 t c =100c 10s p d 45 54 208 gate-source voltage pulsed drain current c 100 drain-source voltage continuous drain current g rev.2.0: june 2017 www.aosmd.com page 1 of 6
AON6152 symbol min typ max units bv dss 45 v v ds =45v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 1.3 1.8 2.3 v 0.9 1.15 t j =125c 1.5 1.9 1.3 1.85 m? g fs 100 s v sd 0.66 1 v i s 100 a c iss 6800 8500 10200 pf c oss 780 1120 1460 pf c rss 25 90 155 pf r g 0.6 1.2 1.8 ? q g (10v) 110 155 nc q g (4.5v) 48 70 nc q gs 24 nc q gd 7.5 nc t d(on) 16 ns t r 6 ns t d(off) 75 ns t f 6.5 ns m? v gs =10v, v ds =22.5v, i d =20a total gate charge electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions gate resistance f=1mhz i dss a zero gate voltage drain current drain-source breakdown voltage i d =250 m a, v gs =0v r ds(on) static drain-source on-resistance gate source charge gate drain charge total gate charge switching parameters turn-on delaytime v ds =0v, v gs =20v maximum body-diode continuous current g input capacitance gate-body leakage current turn-off delaytime turn-off fall time v gs =10v, v ds =22.5v, r l =1.125 w , r gen =3 w diode forward voltage dynamic parameters v gs =4.5v, i d =20a turn-on rise time reverse transfer capacitance v gs =0v, v ds =22.5v, f=1mhz v ds =v gs, i d =250 m a output capacitance forward transconductance i s =1a,v gs =0v v ds =5v, i d =20a v gs =10v, i d =20a t f 6.5 ns t rr 25 ns q rr 74 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge body diode reverse recovery time i f =20a, di/dt=400a/ m s turn-off fall time i f =20a, di/dt=400a/ m s a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the power dissipation p dsm is based on r q ja t 10s and the maximum allowed junction temperature of 150 c. the value in any given application depends on the user's specific board design. b. the power dissipation p d is based on t j(max) =150 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. single pulse width limited by junction temperatu re t j(max) =150 c. d. the r q ja is the sum of the thermal impedance from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. g. the maximum current rating is package limited. h. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. i. the spike duty cycle 5% max in every frequency p eriod, limited by junction temperature t j(max) =125 c. rev.2.0: june 2017 www.aosmd.com page 2 of 6
AON6152 typical electrical and thermal characteristics 0 20 40 60 80 100 120 1 2 3 4 5 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 0 0.5 1 1.5 2 0 5 10 15 20 25 30 r ds(on) (m w ) i d (a) figure 3: on - resistance vs. drain current and gate 0.8 1 1.2 1.4 1.6 1.8 2 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on - resistance vs. junction temperature v gs =4.5v i d =20a v gs =10v i d =20a 25 c 125 c v ds =5v v gs =4.5v v gs =10v 0 20 40 60 80 100 120 0 1 2 3 4 5 i d (a) v ds (volts) figure 1: on-region characteristics (note e) v gs =3v 3.5v 4.5v 10v d figure 3: on - resistance vs. drain current and gate voltage (note e) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c figure 4: on - resistance vs. junction temperature (note e) 0 1 2 3 4 2 4 6 8 10 r ds(on) (m w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =20a 25 c 125 c rev.2.0: june 2017 www.aosmd.com page 3 of 6
AON6152 typical electrical and thermal characteristics 0 2 4 6 8 10 0 20 40 60 80 100 120 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 2000 4000 6000 8000 10000 0 5 10 15 20 25 30 35 40 45 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss 0 200 400 600 800 1000 0.0001 0.001 0.01 0.1 1 10 100 power (w) pulse width (s) c oss c rss v ds =22.5v i d =20a t j(max) =150 c t c =25 c 10 m s 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 1000 i d (amps) v ds (volts) v > or equal to 4.5v 10 m s 1ms dc r ds(on) limited t j(max) =150 c t c =25 c 100 m s 10ms pulse width (s) figure 10: single pulse power rating junction-to- case (note f) 0.01 0.1 1 10 1e-05 0.0001 0.001 0.01 0.1 1 10 100 z q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc t on t p dm in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse v gs > or equal to 4.5v figure 9: maximum forward biased safe operating area (note f) r q jc =0.6 c/w rev.2.0: june 2017 www.aosmd.com page 4 of 6
AON6152 typical electrical and thermal characteristics 0 50 100 150 200 250 0 25 50 75 100 125 150 power dissipation (w) t case ( c) figure 12: power de-rating (note f) 0 50 100 150 0 25 50 75 100 125 150 current rating i d (a) t case ( c) figure 13: current de-rating (note f) 1 10 100 1000 10000 1e-05 0.001 0.1 10 1000 power (w) pulse width (s) t a =25 c 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 z q ja normalized transient thermal resistance pulse width (s) figure 15: normalized maximum transient thermal imp edance (note h) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p dm in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse pulse width (s) figure 14: single pulse power rating junction-to-am bient (note h) r q ja =50 c/w rev.2.0: june 2017 www.aosmd.com page 5 of 6
AON6152 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off l unclamped inductive switching (uis) test circuit & waveforms vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr rev.2.0: june 2017 www.aosmd.com page 6 of 6
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